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TEAM > Stefano Baroni > publications
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Stefano Baroni's scientific publications

 

Submitted for publication

  • B.B. Karki, R.M. Wentzcovitch, S. de Gironcoli, and S. Baroni, High pressure lattice dynamics and thermoelasticity of MgO, submitted to Phys. Rev. B.

 

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In press

  • R. Gebauer and S. Baroni, Magnons in real materials from density-functional theory, Phys. Rev. B (RC), in press.
  • N. Vast and S. Baroni, Effects of isotopic disorder on the Raman spectra of crystals: theory and ab-initio calculations for diamond and germanium, Phys. Rev. B, in press.
     
  • R. Gebauer, S. Serra, G. Chiarotti, S. Scandolo, S. Baroni, and E. Tosatti, Non-collinear spin polarization from frustrated anti-ferromagnetism: a possible scenario for molecular oxygen at high pressure, Phys. Rev. B, 61, 6145 (2000).

 

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1999

  • B.B. Karki, R.M. Wentzcovitch, S. de Gironcoli, and S. Baroni, Elastic anisotropy and wave velocity of MgO at lower mantle conditions, Science,
     
  • A.M. Saitta, S. de Gironcoli, and S. Baroni, Effects of disorder on the optical properties of the (Zn,Mg)(S,Se) quaternary alloy, Appl. Phys. Lett., 75, 2746 (1999).
     
  • R. Lazzari, N. Vast, J.M. Besson, S. Baroni , and A. Dal Corso, Atomic structure and vibrational properties of icosahedral B4C boron carbide, Phys. Rev. Lett. 83, 3230 (1999).
     
  • Janjun Xie, S.P. Chen, J.S. Tse, Stefano de Gironcoli, and Stefano Baroni, High-pressure thermal expansion, bulk modulus, and phonon structure of diamond, Phys. Rev. B 60, 9444 (1999).
     
  • Jianjun Xie, S.P. Chen, Stefano de Gironcoli, and Stefano Baroni,  Thermodynamic properties and lattice dynamics of silver at high pressure: a first-principles study, Phil. Mag. B 79, 911 (1999).
     
  • D. Alfè, S. de Gironcoli, and S. Baroni, The reconstruction of Ni and Rh (001) surfaces upon Carbon, Nitrogen, or Oxygen adsorption,  Surf. Sci., 437, 18 (1999).

 

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1998

 

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1997

 

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1996
  • B. Montanari, M. Peressi, S. Baroni, and E. Molinari, InAs/GaSb(001) valence-band offset: independence of interface composition and strain, Appl. Phys. Lett. 69, 3218 (1996).
     
  • M. Peressi, B. Montanari, S. Baroni, and E. Molinari, Role of interface composition and strain on the band offset at lattice-matched semiconductor heterojunctions: the case of the InAs/GaSb(001) interface, in Proceedings of the Twenty-Third International Conference on THE PHYSICS OF SEMICONDUCTORS, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 943.
     
  • K. Mäder and S. Baroni, Vibrational effects on core-level spectroscopy from ab-initio lattice dynamics,  in Proceedings of the Twenty-Third International Conference on THE PHYSICS OF SEMICONDUCTORS, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 245.
     
  • C. Bungaro, S. de Gironcoli, and S. Baroni, Theory of the anomalous Rayleigh dispersion at H/W(110) surfaces, Phys. Rev. Lett. 77, 2491 (1996).
     
  • A. Filippetti, V. Fiorentini, K. Stokbro, R. Valente, and S. Baroni, Formation energy, relaxations, and stress of low index Rh surfaces, in Materials Theory, Simulations, and Parallel Algorithms, edited by E. Kaxiras and J. D. Johannopoulos, MRS Proceedings 408, 457 (1996).
     
  • P. Pavone, R. Bauer, K. Karch, O. Sch\"utt, S. Vent, W. Windl, D. Strauch, S. Baroni, and S. Degironcoli, Ab Initio phonon alculations in Solids, in Proceedings of the IVth International Conference on Phonon Physics: Phonons 95, Sapporo, edited by T. Nakayama, Physica B, 219-220, 439 (1996).
     
  • G. Roma, C.M. Bertoni, and S. Baroni, The phonon spectra of LiH and LiD from density-functional perturbation theory, Solid State Commun., 98, 203 (1996).

 

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1995

 

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1994
  • A. Debernardi, S. Baroni, and E. Molinari, Anharmonic decay of phonons in semiconductors from first-principles calculations, in Proceedings of the Twenty-second International Conference on The Physics of Semiconductors, edited by D.J. Lockwood (World Scientific, Singapore, 1994), p. 373.}
     
  • G. Bratina, L. Vanzetti, L. Sorba, G. Biasol, A.  Franciosi, M. Peressi, and S. Baroni, Lack of band offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge (001), Ge-GaAs (001), and ZnSe-GaAs (001), Phys. Rev. B 50, 11723 (1994).
     
  • A. Debernardi and S. Baroni, Third-Order Density-functional perturbation theory: a practical implementatio with applications to anharmonic couplings in Si, Solid State Commun., 91, 813 (1994).
     
  • N. Marzari, S. de Gironcoli, and S. Baroni, Structure and phase stability of GaxIn1-xP alloys from first-principles Monte Carlo simulations, Phys. Rev. Lett., 72, 4001 (1994).
     
  • P. Giannozzi and S. Baroni, Vibrational and dielectric properties of C60 from density-functional perturbation theory, J. Chem. Phys., 100, 8537 (1994).
     
  • S. Guha, J. Menéndez, J. B. Page, G. B. Adams, G. S. Spencer, J. P. Lehman, P. Giannozzi, and S. Baroni, Isotopically resolved Raman Spectra of C60, Phys. Rev. Lett. 72, 3359 (1994).
     
  • P. Pavone and S. Baroni, Dependence of the crystal lattice constant on isotopic composition: theory and ab-initio calculations for C, Si, and Ge, Solid State Commun., 90, 295 (1994).
     
  • M. Peressi and S. Baroni, Bulk and interfacial strain in Si/Ge heterostructures, Phys. Rev. B, 49, 7490 (1994).
     
  • A. Dal Corso, S. Baroni, and R. Resta, Density-functional theory of the dielectric constant: gradient-corrected calculation for Silicon, Phys. Rev. B, 49, 5323 (1994).
     
  • R. Nicolini, L. Vanzetti, G. Mula, G. Bratina, L. Sorba, A. Franciosi, M. Peressi, S. Baroni, R. Resta, A. Baldereschi, J.E. Angelo, and W.W. Gerberich, Local interface composition and band discontinuities in heterovalent heterostructures, Phys. Rev. Lett., XX, 294 (1994).

 

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1993
  • M. Peressi, L. Colombo, A. Baldereschi, R. Resta, and S. Baroni, Band offsets engineering at semiconductor heterojunctions, Society of Photo-Optical Instrumentation Engineeers Proceedings Series 1985, 84 (1993).
     
  • N. Tit, M. Peressi, and S. Baroni, Ab-Initio calculation of the band offset at strained GaAs/InAs (001) heterojunctions, Phys. Rev. B (BR) 48, 17607 (1993).
     
  • M. Peressi, L. Colombo, R. Resta, S. Baroni, and A. Baldereschi, Structural and electronic properties of strained Si/GaAs heterostructures, Phys. Rev. B 48, 12047 (1993).
     
  • A. Baldereschi, R. Resta, M. Peressi, S. Baroni, and K. M\"ader, Engineering of semiconductor heterostructures by ultrathin control layers, in Physical Properties of Semiconductor Interfaces at Sub-Nanometer Scale, edited by H.W.M. Salemink and M.D. Pashley (Kluwer Academic Publishers, Dordrecht, 1993), p. 89.
     
  • S. Baroni, P. Pavone, P. Giannozzi, S. de Gironcoli, and E. Molinari, Ab-initio calculation of phonon spectra in semiconductors: from pure crystals to alloys and superlattices, in Proceedings of the International School of Physics Enrico Fermi, Course CXVII, Semiconductor Superlattices and Interfaces, edited by L. Miglio and A.  Stella (North-Holland, Amsterdam), p. 243.
     
  • A. Baldereschi, M. Peressi, S. Baroni, and R. Resta,  Semiconductor interfaces, in Proceedings of the International School of Physics Enrico Fermi, Course CXVII, Semiconductor Superlattices and Interfaces, edited by L. Miglio and A. Stella (North-Holland, Amsterdam), p. 59.
     
  • P.L. Silvestrelli, S. Baroni, and R. Car, Auxiliary-field quantum Monte Carlo for systems with long-range repulsive interactions, Phys. Rev. Lett. 71, 1148 (1993).
     
  • W. Windl, P. Pavone, K. Karch, O. Sch\"utt, D. Strauch, P. Giannozzi, and S. Baroni, Second-order Raman spectra of diamond from ab-initio phonon calculations, Phys. Rev. B, 48, 3154 (1993).
     
  • P. Pavone, K. Karch, O. Schütt, D. Strauch, W. Windl, P. Giannozzi, and S. Baroni, Ab-initio lattice dynamics of diamond, Phys. Rev. B, 48, 3156 (1993).
     
  • A. Dal Corso, R. Resta, and S. Baroni, Non linear piezoelectricity in CdTe, Phys. Rev. B, 47, 16252 (1993).
     
  • A. Dal Corso, S. Baroni, R. Resta, and S. de Gironcoli, Ab-initio calculation of phonon dispersions in II-VI semiconductors, Phys. Rev. B, 47, 3588 (1993).
     
  • G. Scamarcio, M. Haines, G. Abstreiter, E. Molinari, S. Baroni, A.  Fischer, and K. Ploog, Micro-Raman scattering in ultrathin layer superlattices: evidence of zone-center anisotropy of optical phonons, Phys.  Rev. B, 47, 1483 (1993).
     
  • G. Scamarcio, M. Haines, G. Abstreiter, E. Molinari, S. Baroni, and K. Ploog, Zone center anisotropy of optical phonons in ultra-thin layer superlattices observed by micro-Raman spectroscopy, in Proceedings of the Twenty-first International Conference on The Physics of Semiconductors, edited by Ping Jiang and Hou-Zhi Zheng (World Scientific, Singapore, 1993), p. 863.
     
  • S. Baroni, M. Peressi, R. Resta, and A. Baldereschi, Theory of band offsets at semiconductor heterojunctions, in  Proceedings of the Twenty-first International Conference on The Physics of Semiconductors}, edited by Ping Jiang and Hou-Zhi Zheng (World Scientific, Singapore, 1993), p. 689.
     
  • S. de Gironcoli and S. Baroni, Effects of local atomic coordination on the vibrational properties of SiGe alloys, in Proceedings of the Twenty-first International Conference on The Physics of Semiconductors, edited by Ping Jiang and Hou-Zhi Zheng (World Scientific, Singapore, 1993), p. 109.

 

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1992
  • L. Colombo, R. Resta, and S. Baroni, Chemistry, interface features and strain: how do they affect the valence band offset at Si/Ge interfaces?, in Proceedings of the 12th General Conference of the Condensed Matter Division of the European Physical Society, edited by B. Velick\'y, V. Vorl\'\i$\rm\check c$ek, and K. Z\'av$\rm\check e$ta, Physica Scripta, T45, 181 (1992).
     
  • S. de Gironcoli and S. Baroni, Effects of disorder on the vibrational properties of SiGe alloys: failure of mean-field approximations, Phys. Rev. Lett., 69, 1959 (1992).
     
  • G. Biasol, L. Sorba, G. Bratina, R. Nicolini, A. Franciosi, M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures, Phys. Rev. Lett., 69, 1283 (1992).
     
  • M. Buongiorno Nardelli, S. Baroni, and P. Giannozzi, Phonon softening and high-pressure low-symmetry phases of cesium iodide, Phys. Rev. Lett., 69, 1069 (1992).
     
  • S. Baroni, S. de Gironcoli, and P. Giannozzi, S tructure and thermodynamics of  SixGe1-x Alloys from computational alchemy, in Structural and Phase Stability of Alloys, edited by J.L. Morán-López, F. Mejia-Lira, and J.M. Sanchez (Plenum Press, New York, 1992), p. 133.
     
  • J.T. McKinley, Y. Hwu, G. Margaritondo, S. Baroni, and R. Resta, Control of Ge homojunction band offsets via ultrathin  Ga-As dipole layers, Appl. Surf. Sci., 56-58, 762 (1992).
     
  • E. Molinari, S. Baroni, P. Giannozzi, and S. de Gironcoli, Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder, Appl.  Surf. Science, 56-58, 617 (1992).
     
  • B. Jusserand, F. Mollot, R. Planel, E. Molinari, and S. Baroni, Atomic intermixing in short-period GaAs/AlAs superlattices, Surf. Sci. 267, 171 (1992).
     
  • S. Baroni, E. Molinari, P. Giannozzi, and S. de Gironcoli, Effects of disorder on the Raman spectra of GaAs/AlAs superlattices, Phys. Rev. B, 45, 4280 (1992).
     
  • M. Marsi, S. La Rosa, Y. Hwu, F. Gozzo, C. Coluzza, A. Baldereschi, G. Margaritondo, J.T. McKinley, S. Baroni, and R. Resta, Microscopic manipulation of homojunction band lineups, J. Appl. Phys. 71, 2048 (1992).
     
  • S. Baroni and P. Giannozzi, Towards very large scale electronic structure calculations, Europhys. Lett., 17, 547 (1992).

 

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1991
  • J. Grant, J. Men\'endez, A. Pinczuk, L.N. Pfeiffer,  K.W. West, E. Molinari, and S. Baroni, Cation interdiffusion in  GaAs-AlAs superlattices measured with Raman spectroscopy,Appl. Phys. Lett., 59, 2859 (1991).
     
  • L. Colombo, R. Resta, and S. Baroni, Valence-bandoffsets at strained Si/Ge interfaces, Phys. Rev. B 44, 5572 (1991).
     
  • E. Molinari, S. Baroni, P. Giannozzi, and S. de  Gironcoli, Phonon spectra of ultrathin GaAs/AlAs superlattices, in Light Scattering in Semiconductor Structures and Superlattices, edited by D.J. Lockwood and J.F. Young, NATO ASI  ser. B, vol. 273 (Plenum, New York, 1991), p. 39.
     
  • G. Scamarcio, L. Tapfer, W. König, A. Fisher, K. Ploog,  E. Molinari, S. Baroni, P. Giannozzi, and S. de Gironcoli, Infrared reflectivity by TO phonons in (GaAs)m(AlAs)nultrathin superlattices, Phys. Rev. B (RC) 43, 14754 (1991).
     
  • J. McKinley, Y. Hwu, B.E.C. Koltenbah, G. Margaritondo,  S. Baroni, and R. Resta, Control of Ge homojunction band  offsets via ultrathin GaAs dipole layers, J. Vac. Sci. Technol. A  9, 917 (1991).
     
  • S. de Gironcoli, P. Giannozzi, and S. Baroni, Structure and thermodynamics of SixGe1-x alloys from ab-initio Monte Carlo simulations, Phys. Rev. Lett. 66, 2116(1991).
     
  • F. Ancilotto, A. Selloni, W. Andreoni, S. Baroni, R. Car,  and M. Parrinello, Surface phonons and dipole activity of Si  (111) 2 x 1 from ab-initio calculations, Phys. Rev. B  43, 8930 (1991).
     
  • M. Peressi, S. Baroni, R. Resta, and A. Baldereschi,  Tuning band offsets at semiconductor interfaces by intralayer deposition, Phys. Rev. B (RC), 43, 7347 (1991).
     
  • P. Giannozzi, S. de Gironcoli, P. Pavone, and S. Baroni,  Ab-initio calculation of phonon dispersions in semiconductors, Phys. Rev. B 43, 7231 (1991).
     

 

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1990
  • E. Molinari, S. Baroni, P. Giannozzi, and S. de  Gironcoli, Theory of phonons in GaAs/AlAs superlattices, in Proceedings of the Twentieth International Conference on thePhysics of Semiconductors, edited by E.M. Anastassakis, and J.D. Joannopoulos (World Scientific, Singapore, 1990), p. 1429.
     
  • S. Baroni, S. de Gironcoli, and P. Giannozzi,  First-principles calculation of the vibrational properties of GaxAl1-xAs alloys, in Proceedings of the TwentiethInternational Conference on the Physics of Semiconductors, edited by E.M. Anastassakis and J.D. Joannopoulos (World Scientific, Singapore,1990), p. 1739.
     
  • S. de Gironcoli, S. Baroni, and P. Giannozzi, Anovel approach to the structure and thermodynamics of semiconductoralloys in Proceedings of the Twentieth International Conferenceon the Physics of Semiconductors, edited by E.M. Anastassakis and  J.D. Joannopoulos (World Scientific, Singapore, 1990), p. 877.
     
  • S. de Gironcoli, S. Baroni, and R. Resta, Piezoelectricity in III-V and II-VI semiconductors: a systematic ab-initio calculation, Ferroelectrics, 111, 19 (1990).
     
  • S. Baroni, P. Giannozzi, and E. Molinari, Disordereffects on the phonon spectra of ultrathin semiconductorsuperlattices: first-principles results, in: Proceedings of the  Third International Conference on PHONON PHYSICS, Heidelberg, August  1989, edited by S. Hunkliger, W. Ludwig, and G. Weiss (World Scientific, Singapore, 1990), p. 722.
     
  • R. Resta, L. Colombo, and S. Baroni, Absolutedeformation potentials in semiconductors, in Proceedings of the  Third International Conference on PHONON PHYSICS, Heidelberg, August 1989, edited by S. Hunkliger, W. Ludwig, and G. Weiss (World Scientific, Singapore, 1990), p. 208.
     
  • S. Baroni, S. de Gironcoli, and P. Giannozzi, Phonondispersions in GaxAl1-xAs alloys, Phys. Rev. Lett.  65, 84 (1990).
     
  • R. Resta, L. Colombo, and S. Baroni, Absolutedeformation potentials in semiconductors, Phys. Rev. B (RC) 41, 12358 (1990); Erratum, ibid. 43, 14273 (1991).
     
  • M. Peressi, S. Baroni, A. Baldereschi, and R. Resta,  Electronic structure of InP/Ga0.47In0.53As interfaces, Phys. Rev. B 41, 12106 (1990).
     
  • S. Baroni, P. Giannozzi, and E. Molinari, Phonon spectra of ultrathin GaAs/AlAs superlattices: an ab-initio calculation, Phys. Rev. B (RC) 41, 3870 (1990).
     

 

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1989
  • M. Peressi, S. Baroni, A. Baldereschi, and R. Resta,  Valence-band offset at InP/Ga0.47In0.53As lattice-matched heterojunctions, Helv. Phys. Acta 62, 862  (1989).
     
  • S. Baroni, R. Resta, B. Baldereschi, and M. Peressi,  Can we tune the band offset at semiconductor heterojunctions?  in Spectroscopy of Semiconductor Microstructures edited byG. Fasol, A. Fasolino, and P. Lugli, NATO ASI ser. B, no 206 (Plenum,New York, 1989), p. 251.
     
  • A. Parola, S. Sorella, S. Baroni, R. Car, M. Parrinello,  and E. Tosatti, Recent numerical results on the two-dimensionalHubbard model, in Proceedings of the International Conference on Materials and Mechanisms of High-Temperature Superconductors,Physica C 162-164, 771 (1989).
     
  • A. Parola, S. Sorella, S. Baroni, M. Parrinello, and  E. Tosatti, Static properties of the 2D Hubbard model on a  4x4 cluster, in Proceedings of the Adriatico Research  Conference on Strongly Correlated Electron Systems, edited by E. Tosatti, and L. Yu, Int. J.  Mod. Phys. B 3, 139 (1989).
     
  • R. Resta, A. Baldereschi, and S. Baroni, Electronicproperties of isovalent and heterovalent semiconductor interfaces, Journ. de Chimie Physique 86, 789 (1989).
     
  • R. Resta, S. Baroni, and A. Baldereschi, Theory ofband offsets at semiconductor heterojunctions: an ab-initiolinear-response approach, Superlattices and Microstructures 6, 31 (1989).
     
  • S. Baroni, R. Resta, and A. Baldereschi, Band offsetsat semiconductor heterojunctions: bulk or interface effects?, in Band Structure Engineering in Semiconductor Microstructures, edited  by R.A. Abram and M. Jaros NATO ASI Series ser. B, no 189 (Plenum, NewYork, 1989), p. 51.
     
  • M. Marinelli, T.M. de Pascale, F. Meloni, G. Mula,  M. Serra, and S. Baroni, Theoretical study of cubicvs. tetragonal structures of defect zincblende semiconductors: CdIn2Se4, Phys. Rev. B 40, 1725 (1989).
     
  • S. de Gironcoli, S. Baroni, and R. Resta,  Piezoelectric properties of III-V semiconductors from  first-principles linear-response theory, Phys. Rev. Lett. 62,  2843 (1989).
     
  • S. Sorella, S. Baroni, R. Car, and M. Parrinello, Anovel technique for the simulation of interacting fermion systems, Europhys. Lett. 8, 663 (1989).
     
  • I. Stich, R. Car, M. Parrinello, and  S. Baroni, Conjugate gradient minimization of the energy functional: a new method for electronic structure calculations, Phys. Rev. B 39, 4997 (1989).

 

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1988
  • S. Baroni, P. Giannozzi, and E. Molinari, Ab-initiocalculation of phonon spectra in ultrathin semiconductorsuperlattices, in Proceedings of the Nineteenth InternationalConference on THE PHYSICS OF SEMICONDUCTORS, edited by W. Zawadzki (Institute of Physics, Polish Academy of Sciences, Wroclaw, 1988), p. 795.
     
  • S. Baroni, R. Resta, and A. Baldereschi, Electronicstructure of polar interfaces from linear-response theory in Proceedings of the Nineteenth International Conference on THEPHYSICS OF SEMICONDUCTORS, edited by W. Zawadzki (Institute of Physics, Polish Academy of Sciences, Wroclaw, 1988), p. 525.
     
  • S. Sorella, E. Tosatti, S. Baroni, R. Car, and  M. Parrinello, Numerical simulation of the 1D and 2D Hubbardmodels: Fermi liquid behavior and its breakdown, in Proceedingsof the Adriatico Research Conference ''Towards the Theoretical Understanding of the High-Tc Superconductors'', edited by S. Lundqvist, E. Tosatti, M. Tosi, and L. Yu, Int. J. Mod. Phys. B,1, 993 (1988).
     
  • M. Marinelli, S. Baroni, and F. Meloni, Structuraland electronic properties of spinel semiconductors: an ab-initio pseudopotential study of MgIn2S4, Phys. Rev. B, 38, 8258 (1988).
     
  • A. Baldereschi, S. Baroni, and R. Resta, Bandoffsets in lattice-matched heterojunctions: a model and first-principles calculations for GaAs/AlAs, Phys. Rev. Lett. 61, 734 (1988).

 

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1987
  • M. Marinelli, F. Meloni, G. Mula, and S. Baroni, Ab-initio total-energy approach to the structural properties of MgIn2S4, in: Proceedings of the Seventh International Conference on TERNARY AND MULTINARY COMPOUNDS, edited by S.K. Deb and A. Zunger (MRS, Pittsburgh, 1987), p. 251.
     
  • M. Marinelli, F. Meloni, G. Mula, and S. Baroni, Structural properties of AIIBIII2CIV4 spinel compounds, in Proceedings of the Eighteenth International Conference on THE PHYSICS OF SEMICONDUCTORS, edited by O. Enström (World Scientific, Singapore, 1987), p. 1177.
     
  • S. Baroni, P. Giannozzi, and A. Testa, Elastic constants of crystals from linear-response theory, Phys. Rev. Lett. 59, 2662 (1987).
     
  • S. Baroni, P. Giannozzi, and A. Testa, Green's function approach to linear response in solids, Phys. Rev. Lett. 58, 1861 (1987).
     
  • S. Baroni and P. Giannozzi, P ressure-induced structural instability of cesium halides from ab-initio pseudopotential techniques, Phys. Rev. B 35, 765 (1987).

 

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<1987
  • S. Baroni and R. Resta, Ab-initio calculation of the macroscopic dielectric constant in silicon, Phys. Rev. B 33, 7017 (1986).
     
  • S. Baroni and R. Resta, Ab-initio calculation of the low-frequency raman cross section in silicon, Phys. Rev. B (RC) 33, 5969 (1986).
     
  • S. Baroni and R. Resta, Ab-initio calculation of the Raman tensor in silicon, in: Proceedings of the Second International Conference on PHONON PHYSICS}, edited by J. Koll\`ar, N. Kro\`o, N. Menhy\`ard, and T. Sikl\`os (World Scientific, Singapore, 1985), p. 946.
     
  • S. Baroni, G. Pastori Parravicini, and G. Pezzica, Quasiparticle band structure of lithium hydride, Phys. Rev. B 32, 4077 (1985).
     
  • S. Baroni and A. Baldereschi, On the compressed-ion model of cohesion in alkali halides, J. Phys. Chem. Solids 46, 675 (1985).
     
  • S. Baroni and A. Quattropani, On the Green's function technique for the study of multiphoton transitions in atoms, Nuovo Cimento D 5, 89 (1985).
     
  • P. Giannozzi and S. Baroni, Hartree-Fock energy levels in molecular crystals: solid hydrogen in the cubic phase, Phys. Rev. B 30, 7187 (1984).
     
  • S. Baroni, Exact-exchange extension of the local-spin-density approximation in atoms. II. The iron series, J. Chem. Phys. 80, 5703 (1984).
     
  • S. Baroni, G. Grosso, and G. Pastori Parravicini, Many-body effects on the electron states of solid argon, Phys. Rev. B 29, 2891 (1984).
     
  • S. Baroni and E. Tuncel, Exact-exchange extension of the local-spin-density approximation in atoms: calculation of total energies and electron affinities, J. Chem. Phys. 79, 6140 (1983).
     
  • S. Baroni, A. Quattropani, and A. Baldereschi, Influence of electronic relaxation on core and valence excited states of alkaline-earth atoms, Phys. Rev. A 25, 2869 (1982).
     
  • S. Baroni, G. Grosso, and G. Pastori Parravicini, Energy bands of krypton and xenon with the GOPW method, Phys. Status Solidi (b) 110, 227 (1982).
     
  • R. Car, E. Tosatti, S. Baroni, and S. Leelaprute, Dielectric band structure of crystals: general properties and calculations for silicon, Phys. Rev. B 24, 985 (1981).
     
  • S. Baroni, G. Grosso, and G. Pastori Parravicini, Hartree-Fock energy levels in solids: application to argon, Phys. Rev. B 23, 6441 (1981).
     
  • S. Baroni, A. Quattropani, and A. Baldereschi, Rydberg series of valence and core excited inert-gas atoms: effects of electron relaxation, Chem. Phys. Lett. 79, 509 (1981).
     
  • S. Baroni, G. Grosso and G. Pastori Parravicini, Energy bands and excitons in solid neon, Phys. Rev. B 22, 6440 (1980).
     
  • S. Baroni, G. Grosso, L. Martinelli, and G. Pastori Parravicini, Valence excitons and inner-shell excitons in gaseous and solid argon, Phys. Rev. B 20, 1713 (1979).

 

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